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| VN0645 VN0650 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 450V 500V MIL visual screening available RDS(ON) (max) 16 16 ID(ON) (min) 0.5A 0.5A Order Number / Package TO-39 VN0645N2 -- TO-92 -- VN0650N3 Die -- VN0650ND 7 High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information. Advanced DMOS Technology The VN0650 is NOT recommended for new designs. Please use VN2450 instead. These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Features s Free from secondary breakdown s Low power drive requirement s Ease of paralleling s Low CISS and fast switching speeds s Excellent thermal stability s Integral Source-Drain diode s High input impedance and high gain s Complementary N- and P-channel devices Applications s Motor controls s Converters s Amplifiers s Switches s Power supply circuits s Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Package Options Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. 7-175 BVDSS BVDGS 20V -55C to +150C 300C DGS TO-39 Case: DRAIN SGD TO-92 Note: See Package Outline section for dimensions. VN0645/VN0650 Thermal Characteristics Package TO-39 TO-92 ID (continuous)* 0.4A 0.2A ID (pulsed) 1.5A 1.0A Power Dissipation @ TC = 25C 6W 1W C/W 21 125 jc C/W 125 170 ja IDR* 0.4A 0.2A IDRM 1.5A 1.0A * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25C unless otherwise specified) Symbol BVDSS VGS(th) VGS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current VN0650 VN0645 Min 500 450 2 4 -4.5 100 10 1 ID(ON) RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr ON-State Drain Current 0.5 Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 300 100 120 20 10 130 75 20 10 10 20 10 1.8 V ns VGS = 0V, ISD = 0.4A VGS = 0V, ISD = 0.4A ns VDD = 25V, ID = 0.5A, RGEN = 25 pF VGS = 0V, VDS = 25V f = 1 MHz 0.8 1.1 12 11 16 0.75 V mV/C nA A mA Typ Max Unit V Conditions VGS = 0V, ID = 2mA VGS = VDS , ID = 2mA VGS = VDS , ID = 2mA VGS = 20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125C VGS = 5V, VDS = 25V VGS = 10V, VDS = 25V VGS = 5V, ID = 100mA VGS = 10V, ID = 400mA VGS = 10V, ID = 400mA VDS = 25V, ID = 400mA A %/C m Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V 90% INPUT 0V 10% t(ON) td(ON) VDD OUTPUT 0V 90% 90% tr t(OFF) td(OFF) tF PULSE GENERATOR Rgen VDD RL OUTPUT D.U.T. 10% 10% INPUT 7-176 VN0645/VN0650 Typical Performance Curves Output Characteristics 2.0 1.0 Saturation Characteristics VGS = 6V to 10V ID (amperes) VGS = 6V to 10V ID (amperes) 1.0 5V 0.5 4V 4V 3V 0 0 10 20 30 40 50 0 0 2 4 6 8 3V 10 7 VDS (volts) Transconductance vs. Drain Current 0.3 50 VDS (volts) Power Dissipation vs. Case Temperature VDS = 25V TA = -55C 0.24 40 GFS (siemens) TA = 25C TA = 150C 0.12 PD (watts) 0.18 30 20 0.06 10 TO-39 TO-92 0 0 0.2 0.4 0.6 0.8 1.0 0 0 25 50 75 100 125 150 ID (amperes) Maximum Rated Safe Operating Area 10 1.0 TC (C) Thermal Response Characteristics Thermal Resistance (normalized) TO-39 (pulsed) 0.8 ID (amperes) 1.0 0.6 TO-39 (DC) 0.4 0.1 TO-92 (DC) TO-39 PD = 6W TC = 25C TO-92 P D = 1W T C = 25C 0.01 0.1 1 10 0.2 TC = 25C 0.01 1 10 100 1000 0 0.001 VDS (volts) tp (seconds) 7-177 VN0645/VN0650 Typical Performance Curves BVDSS Variation with Temperature 30 1.1 24 On-Resistance vs. Drain Current VGS = 5V VGS = 10V BVDSS (normalized) RDS(ON) (ohms) -50 0 50 100 150 18 1.0 12 6 0.9 0 0 0.3 0.6 0.9 1.2 1.5 Tj (C) Transfer Characteristics 1.0 ID (amperes) V(th) and RDS Variation with Temperature 2.0 1.4 VDS = 25V 25C RDS @ 10V, 400mA 1.6 1.2 1.2 1.0 0.8 0.8 ID (amperes) 150C 0.5 V(th) @ 2mA 0.6 0 0 2 4 6 8 10 -50 0 50 100 0.4 0 150 VGS (volts) Capacitance vs. Drain-to-Source Voltage 200 10 Tj(C) Gate Drive Dynamic Characteristics f = 1MHz 8 150 VDS = 10V C (picofarads) VGS (volts) VDS = 40V 6 CISS 100 179 pF 4 50 COSS CRSS 0 0 10 20 30 40 2 110 pF 0 0 0.5 1.0 1.5 2.0 2.5 VDS (volts) QG (nanocoulombs) 7-178 RDS(ON) (normalized) VGS(th) (normalized) TA = -55C |
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